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报道了最大振荡频率为200 GHz的基于蓝宝石衬底的AlGaN/GaN高电子迁移率晶体管(HEMT).外延材料结构采用InGaN背势垒层来减小短沟道效应,器件采用凹栅槽和T型栅结合的工艺,实现了Ka波段AlGaN/GaNHEMT.器件饱和电流达到1.1 A/mm,跨导为421 mS/mm,截止频率(fT)为30 GHz,最大振荡频率(fmax)为105GHz.采用湿法腐蚀工艺将器件的Si3N4钝化层去除后,器件的Cgs和Cgd减小,器件截止频率提高到50 GHz,最大振荡频率提高到200 GHz.
Reported a sapphire substrate-based AlGaN / GaN high electron mobility transistor (HEMT) with a maximum oscillation frequency of 200 GHz. The epitaxial material structure uses InGaN backbones to reduce the short channel effect. The device uses a concave gate and T Gate-bonding process to achieve the Ka-band AlGaN / GaNHEMT device saturation current of 1.1 A / mm, transconductance of 421 mS / mm, cutoff frequency (fT) of 30 GHz, the maximum oscillation frequency (fmax) The wet etching process removes the Si3N4 passivation layer of the device and reduces the Cgs and Cgd of the device. The cut-off frequency of the device is increased to 50 GHz and the maximum oscillation frequency is increased to 200 GHz.