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本文介绍了全气密陶瓷封装GaAs MMIC开关的设计方法和制造工艺.研制成的GaAsMMIC单刀单掷开关在DC-12GHz频带内,插入损耗为0.3—1.4dB,隔离度为19—27dB,反射损耗大于11dB,开关速度小于1ns,8GHz下功率处理能力大于25dBm.
In this paper, the design method and manufacturing process of all-air-tight ceramic package GaAs MMIC switch are introduced.The GaAs MMIC single-throw switch developed in the DC-12GHz band has 0.3-1.4dB insertion loss, 19-27dB isolation, Greater than 11dB, switching speed less than 1ns, 8GHz power handling capacity greater than 25dBm.