论文部分内容阅读
随电子器件不断向微型化发展,出现了高密度集成电路。目前在几平方毫米的硅片上已可容纳下10~4以上个晶体管。布线宽度在六十年代末为10μm,七十年代末已达到5μm,八十年代初竟达到1～2μm,目前已进入亚微米阶段。由于材料的不均匀性、工艺条件的不一致性,高密度的集成电路(如线性电路、A/D、D/A转换电路等)制成后,要经过微调才能达到预期的指标。尤其是A/D、D/A电路的电阻网络,微调范围大,精度要求高,过程比较复杂。12
With the continuous miniaturization of electronic devices, high-density integrated circuits have emerged. Currently in a few square millimeters of silicon has been able to accommodate more than 10 to 4 transistors. The width of the wiring was 10μm in the late 1960s and reached 5μm at the end of the seventies, reaching 1-2μm in the early 1980s and has now entered the submicron stage. Due to the material inhomogeneity and the inconsistency of the process conditions, high density integrated circuits (such as linear circuits, A / D, D / A conversion circuits, etc.) are made to be fine-tuned to achieve the desired specifications. Especially A / D, D / A circuit resistance network, fine-tuning range, high precision, the process is more complicated. 12