日本电报电话公用公司(NTT)电信实验室研制成一种10万个元件的16K位砷化镓静态随机存取存储器(SRAM),其集成度比NTT1983年2月生产的器件大4倍。这项研制工作是在无缺陷GaAs晶片上的一个7.2 x6.2毫米的芯片上进行的。有源场效应晶体管 NTT Telecom Labs developed a 100,000-element 16K-bit Gallium Arsenide SRAM with four times as many integrated devices as the NTT’s February 1983 device. This development was done on a 7.2 x 6.2 mm chip on a defect-free GaAs wafer. Active Field Effect Transistor