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为了制备高质量的GaN纳米结构,采用磁控溅射技术先在硅衬底上制备Ga2O3/V薄膜,然后在流动的氨气中进行氨化反应,成功制备出GaN纳米线。采用X射线衍射(XRD)、傅里叶红外吸收光谱(FTIR)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)对样品进行分析。研究结果表明,采用此方法得到了六方纤锌矿结构的GaN纳米线,且900℃时制备的纳米线质量最好,直径在60nm左右,长度达到十几微米。
In order to prepare high-quality GaN nanostructures, Ga2O3 / V thin films were prepared on silicon substrate by magnetron sputtering technique, and then ammoniated by flowing ammonia gas to prepare GaN nanowires successfully. The samples were analyzed by XRD, FTIR, SEM and TEM. The results show that the GaN nanowires with hexagonal wurtzite structure are obtained by this method. The nanowires prepared at 900 ℃ have the best quality with the diameter of about 60nm and the length of ten nanometers.