The resistive switching behavior in Ta2O5 thin films has been an active research study interests in the field of non-volatile memory devices.Amorphous TaOx
High-quality-factor and low temperature coefficient of the resonant frequency Ca0.66Ti0.34La0.3Al0.3O3 ceramics had been prepared by the conventional solid-
Recently,the type-II multiferroics,in which the ferroelectricity is induced directly by particular magnetic orders,have been receiving special attentions,be