采用PECVD技术,在玻璃衬底上沉积μc-Si:H薄膜.用拉曼光谱、SEM和UV分光光度计对不同沉积温度下沉积的薄膜的结构特性进行分析.研究发现:沉积温度较低时,随着沉积温度的升高,薄膜的晶化率增加;当沉积温度超过某一温度值时,随着温度的进一步升高,薄膜的晶化率降低.这时,表面反应由表面扩散限制转变为流量控制.该温度值随着硅烷含量的降低而降低. The deposition of μc-Si: H thin films on glass substrate by PECVD was studied.The Raman spectra, SEM and UV spectrophotometer were used to analyze the structural properties of films deposited at different deposition temperatures.The results show that when the deposition temperature is low , As the deposition temperature increases, the crystallization rate of the film increases; when the deposition temperature exceeds a certain temperature value, with the further increase of the temperature, the crystallization rate of the film decreases .At this time, the surface reaction is limited by surface diffusion Into a flow control, which decreases with decreasing silane content.