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采用常压金属有机化学气相沉积(AP-MOCVD)技术、三步生长法,分别以H2O和N2O为氧源,DEZn为Zn源,N2作载气,在c-Al2O3衬底上生长出了晶体质量较好的ZnO薄膜。用X射线双晶衍射(DCXRD)和光致发光谱对ZnO薄膜的结晶性能和光学性质进行表征。结果显示,ZnO倾斜对称面(10-12)的ω扫描半峰全宽为350″,表明ZnO薄膜结晶性能良好;低温10 K光致发光谱结果表明,N2O为氧源生长的ZnO膜和H2O为氧源生长的ZnO膜的发光特性明显不同,没有观察到与氢有关的中性施主束缚激子对应的3.331 eV双电子卫星峰(TES)。这一结果表明,用N2O为氧源生长的ZnO薄膜中不易引进氢杂质。
Using atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD) technique and three-step growth method, respectively, H2O and N2O as oxygen source, DEZn as Zn source and N2 as carrier gas were grown on the c-Al2O3 substrate Good quality ZnO film. The crystallinity and optical properties of ZnO thin films were characterized by X-ray double crystal diffraction (DCXRD) and photoluminescence spectra. The results show that the full width at half-maximum of the ω-scan of ZnO tilt symmetry plane (10-12) is 350 ", indicating that the ZnO thin film has good crystallinity. The results of 10 K photoluminescence at low temperature show that N2O is the ZnO film and H2O The luminescence properties of the ZnO films grown for the oxygen source are obviously different, and no 3.331 eV double electron (TES) peak corresponding to the hydrogen-related neutral donor bound exciton is observed. This result shows that the growth of ZnO film is not easy to introduce hydrogen impurities.