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采用激光分子束外延(LMBE)技术在Si(100)上制备了高质量的TiN薄膜。对N2分压和激光脉冲能量对TiN薄膜晶体结构、生长模式和表面形貌影响的研究表明,TiN单晶薄膜呈(200)择优取向,在N2分压为10-1 Pa时,薄膜的结晶度高且表面平整致密。随着N2分压的增加,TiN(200)衍射峰向低角度移动。激光脉冲能量显著影响TiN薄膜的生长模式,在能量为200 mJ/p时,薄膜呈二维层状生长模式且具有纳米级平滑表面,为制备高取向度AlN薄膜提供了很好的条件。
High quality TiN thin films were prepared on Si (100) by laser molecular beam epitaxy (LMBE). The effects of N2 partial pressure and laser pulse energy on the crystal structure, growth mode and surface morphology of TiN thin films were studied. The results show that the preferred orientation of TiN single crystal films is (200) and the partial pressure of N2 is 10-1 Pa. High degree and dense surface. With the increase of partial pressure of N2, the diffraction peak of TiN (200) moves to low angle. The energy of laser pulse significantly affects the growth mode of TiN thin films. When the energy is 200 mJ / p, the films exhibit two-dimensional layered growth mode and nanoscale smooth surface, which provides good conditions for the preparation of highly oriented AlN films.