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从理论和实验两方面研究了硅晶体管电流增益的低温特性,建立了电流增益的温度模型,阐明了电流增益低温下降的机理,在此基础上探讨了获得具有良好电性能的硅低温晶体管的方法,结论如下:电流增益由发射效率决定时,具有正温度系数,且随温度下降而下降,下降程度随工作电流的减小而增强.发射区采用轻掺杂技术以减小禁带变窄量,并考虑载流子冻析效应,可获得适于低温工作的硅双极晶体管.
The low temperature characteristics of the current gain of the silicon transistor are studied theoretically and experimentally. The temperature model of the current gain is established. The mechanism of the low temperature drop of the current gain is clarified. The method of obtaining the low temperature transistor with good electrical performance is discussed , The conclusions are as follows: The current gain is determined by the emission efficiency, with a positive temperature coefficient, and decreases with temperature drop, the degree of decline increases with the reduction of operating current.Elevator region using light-doped technology to reduce the band gap narrowing , And consider the carrier freeze-thaw effect, available for low-temperature work of the silicon bipolar transistor.