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采用第一性原理的方法对Cu和In提高Sn基钎料抗电性能机制进行研究.计算结果表明,Sn31Cu和Sn31In相对Sn32具有更高的扩散激活能,并且最靠近掺杂位置的Sn原子的扩散迁移能高于Cu和In原子,这表明Cu和In的掺杂可以提高Sn基钎料的抗电性能,并且Cu和In原子在电迁移过程中是占主导的扩散元素.电子结构分析表明Cu和In的掺杂可以提高体系的稳定性,特别是极大地稳定了与其邻近的Sn原子.
The first-principles method was used to study the mechanism of Cu and In improving the electric resistance of Sn-based solder.The calculated results show that Sn31Cu and Sn31In have higher diffusion activation energy than Sn32, and the closest to the Sn atoms Diffusion and migration can be higher than that of Cu and In atoms, indicating that the doping of Cu and In can improve the electric resistance of Sn-based solder and Cu and In atoms are the predominant diffusion elements in the electromigration process.The electronic structure analysis shows The doping of Cu and In can improve the stability of the system, especially stabilizing the Sn atoms adjacent to it greatly.