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最近中国科学院物理研究所韩秀峰课题组研制了一种新型的磁随机存取存储器(MRAM)原理型器件,这种新型磁随机存取存储器摈弃了传统的采用椭圆形磁性隧道结作为存储单元和双线制脉冲电流产生和合成脉冲磁场驱动比特层磁矩翻转的做法,而是采用100纳米尺度下的磁矩闭合型纳米环状磁性隧道结作为存储单元,并采取正负脉冲极化电流
Recently, Chinese Academy of Sciences Institute of Physics Han Xiufeng task force developed a new type of magnetic random access memory (MRAM) principle device, the new magnetic random access memory to abandon the traditional use of oval magnetic tunnel junction as the memory cell and Two-wire pulse current generation and pulse magnetic field driven bit-layer magnetic moment reversal approach, but the use of 100-nanometer scale magnetic moment closed-type nano-ring magnetic tunnel junction as a storage unit and take positive and negative pulse polarization current