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设计了一种适用于SiGe BiCMOS工艺的低成本、高性能垂直结构PNP器件。基于仿真结果,比较了不同发射区和基区制作方法对器件特性的影响。在确定器件结构和制作工艺的基础上,进一步优化了器件特性。基于仿真得到的工艺条件所制作的PNP器件,其特性与仿真结果基本一致。最终优化的PNP器件的电流增益为38,击穿电压大于7V,特征频率为10GHz。该PNP晶体管改善了横向寄生硅基区PNP晶体管的性能,减少了垂直SiGe基区PNP晶体管工艺的复杂性,采用成本低廉的简单工艺实现了优良的器件性能。
A low-cost, high-performance vertical structure PNP device designed for the SiGe BiCMOS process was designed. Based on the simulation results, the influence of different emitter and base region fabrication methods on device characteristics is compared. Based on the device structure and fabrication process, the device characteristics are further optimized. The PNP device fabricated based on the simulated process conditions has the same characteristics as the simulation results. The final optimized PNP device current gain of 38, the breakdown voltage is greater than 7V, the characteristic frequency of 10GHz. The PNP transistor improves the performance of a lateral parasitic silicon-based PNP transistor, reduces the complexity of a vertical SiGe-base PNP transistor process, and achieves excellent device performance with a simple and inexpensive process.