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日本富士通研究所的泷川、伊藤、土肥、今井、植田等人,在1978年度的日本电子通信学会全国综合大会上,介绍了他们把Hg_(0.8)Cd_(0.2)Te红外探测器阵列和硅电荷耦合移位寄存器互连、制成的一维红外线成像器件(资料号S11-1)。他们工作的特点是提高了注入效率,并把元件之间的灵敏度偏差降低到了1/10。这次使用的是10元阵列。
Takikawa, Ito, Tsukamoto, Imai and Ueda at the Fujitsu Research Institute of Japan introduced their Hg_ (0.8) Cd_ (0.2) Te infrared detector array and the silicon at the 1978 National Composites Conference of the Japan Electronics and Communications Research Society Charge-coupled shift register interconnection, made of one-dimensional infrared imaging device (material number S11-1). Their job is characterized by improved injection efficiency and a one-tenth reduction in sensitivity between components. This time using a 10 yuan array.