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The non-ideal effect of 4H–Si C bipolar junction transistor(BJT) with a double Gaussian-doped base is characterized and simulated in this paper.By adding a specific interface model between Si C and Si O2,the simulation results are in good agreement with the experiment data.An obvious early effect is found from the output characteristic.As the temperature rises,the early voltage increases,while the current gain gradually decreases,which is totally different from the scenario of silicon BJT.With the same effective Gummel number in the base region,the double Gaussian-doped base structure can realize higher current gain than the single base BJT due to the built-in electric field,whereas the early effect will be more salient.Besides,the emitter current crowding effect is also analyzed.Due to the low sheet resistance in the first highlydoped base epilayer,the 4H–BJT with a double base has more uniform emitter current density across the base-emitter junction,leading to better thermal stability.
The non-ideal effect of 4H-Si C bipolar junction transistor (BJT) with a double Gaussian-doped base is characterized and simulated in this paper. By adding a specific interface model between Si C and Si O2, the simulation results are in good agreement with the experiment data. An early early effect is found from the output characteristic. As the temperature rises, the early voltage increases, while the current gain gradually decreases, which is totally different from the scenario of silicon BJT.With the same effective Gummel number in the base region, the double Gaussian-doped base structure can realize higher current gain than the single base BJT due to the built-in electric field, the early effect will be more salient.Besides, the emitter current crowding effect is also The analysis of the low sheet resistance in the first highly-covered base epilayer, the 4H-BJT with a double base has more uniform emitter current density across the base-emitter junction, leading to better thermal stab ility.