论文部分内容阅读
用溅射后退火反应法在Si(111)衬底上制备的高质量GaN薄膜.XRD,XPS,SEM和PL测量结果表明该方法制备的GaN是六角纤锌矿结构的多晶.GaN的最大晶粒尺寸约为100 nm.在354 nm处发现强室温光致发光峰,带隙相对于体GaN发生了轻微蓝移.
High-quality GaN films were deposited on Si (111) substrates by sputtering post annealing reaction.The results of XRD, XPS, SEM and PL measurements showed that the GaN prepared by this method is polycrystalline with hexagonal wurtzite structure.The maximum of GaN The grain size is about 100 nm, and the strong room temperature photoluminescence peak is found at 354 nm, with a slight blue shift of the bandgap relative to bulk GaN.