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应用中频感应提拉法生长出不同掺杂浓度的Yb∶FAP激光晶体。运用电感耦合等离子体原子发射光谱仪(ICP-AES)测定了Yb3+离子在Yb∶FAP晶体中的分凝系数约为0.03。随着晶体的生长,晶体中Yb3+离子的轴向浓度逐渐增大。研究Yb∶FAP晶体在77 K和300 K温度下的吸收光谱发现,振动谱的变化主要是由电子-声子近共振耦合作用引起的。系统地研究了不同Yb3+离子掺杂浓度Yb∶FAP晶体的吸收光谱和荧光光谱。通过吸收光谱的测量计算了晶体的吸收截面。Yb∶FAP晶体在904 nm和982 nm处存在Yb3+离子的两个吸收带,适合激光二极管抽运。
The Yb: FAP laser crystals with different doping concentrations were grown by the mid-frequency induction pulling method. The segregation coefficient of Yb3 + ions in Yb:FAP crystals was determined to be about 0.03 by inductively coupled plasma atomic emission spectrometry (ICP-AES). As the crystal grows, the axial concentration of Yb3 + ions in the crystal gradually increases. The absorption spectra of Yb:FAP crystals at 77 K and 300 K were studied. It was found that the change of the vibrational spectrum was mainly caused by the coupling of electron-phonon resonance. The absorption and fluorescence spectra of Yb:FAP crystals with different doping concentrations of Yb3 + were studied systematically. The absorption cross section of the crystal was calculated by absorption spectrum measurement. The Yb: FAP crystal has two absorption bands of Yb3 + ions at 904 nm and 982 nm, which are suitable for laser diode pumping.