利用射频磁控反应溅射法 ,以 Ar,CH4 为原料气体 ,在较宽的工艺参数范围内制备出了 Gex C1- x薄膜 ,用干涉法测量了薄膜的厚度 ,对 Gex C1- x薄膜的沉积速率和 Ge原子百分比进行了研究。结果表明 ,Gex C1- x薄膜的沉积速率并没有随着靶中毒后而显著下降 ,甚至略有提高 ,而且 Ge原子百分比可以任意变化 ,表现出与通常磁控反应溅射法不同的特征 ,这与靶中毒之后反应气体粒子在靶面和基片上的反应特点有关。这一结论对磁控反应溅射法制备碳化物有普遍意义。 Gex C1-x thin films were prepared by RF magnetron reactive sputtering with Ar and CH4 as raw materials, and the thickness of the films was measured by the interference method. The Gex C1-x thin films Deposition rate and Ge atomic percentage were studied. The results show that the deposition rate of Gex C1-x thin film does not decrease significantly with the target poisoning or even slightly increase, and the Ge atomic percentage can be varied arbitrarily, showing different characteristics from the usual magnetron reactive sputtering method, which And target poisoning after the reaction of gas particles in the target surface and the reaction characteristics of the substrate. This conclusion on the magnetron reactive sputtering preparation of carbide has universal significance.