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采用射频磁控溅射工艺,以Al掺杂ZnO(ZAO)陶瓷靶为靶材在石英玻璃基片上制备出具有优良光电性能的ZAO透明导电薄膜,研究了溅射功率对薄膜光电性能的影响。在不同溅射功率条件下制备的ZAO薄膜具有很好的c轴择优取向。较大功率溅射有利于薄膜晶粒尺寸的增大、电阻率降低。ZAO薄膜在可见光区的透过率平均值高达90%以上,受溅射功率影响不大。在340nm-420nm波长附近ZAO薄膜透过率急剧下降,呈现明显的紫外吸收边;高的溅射功率提高了ZAO薄膜的光学带隙宽度。
The ZAO transparent conductive film with excellent photoelectric properties was prepared on a quartz glass substrate by RF magnetron sputtering with Al-doped ZnO (ZAO) as target. The influence of sputtering power on the photoelectric properties of the film was also studied. The ZAO films prepared under different sputtering powers have good c-axis preferred orientation. Higher power sputtering is conducive to the increase of the size of the film grain size, resistivity decreased. The average transmittance of ZAO thin film in the visible region is over 90%, which is not affected by the sputtering power. The transmittance of ZAO thin film sharply drops near the wavelength of 340nm-420nm, showing obvious UV absorption edge. The high sputtering power increases the optical band gap of ZAO thin film.