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利用扫描隧道显微镜／扫描隧道谱研究了掺杂浓度对砷化镓（１００）抛光片真实表面电子特性的影响。在针尖样品间距一定时，ｎ型与Ｂ型砷化镓电导隙都随掺杂浓度的降低而显著增大。ｎ型砷化镓的隧道电流／电压特性曲线变化规律与ｐ型的相似但是也存在明显的差异，特别是在正向偏置时掺杂浓度对ｐ型砷化镓隧道电流的影响远比ｎ型的大。隧道谱线形状的差异可以用于定性地区分浅掺杂ｐ－ｎ结ｎ型与ｐ型半导体表面，因此ＳＴＭ／ＳＴＳ有希望成为研究ｐ－ｎ结、超晶格截面和界面特性的重要手段。
The effect of doping concentration on the real surface electronic properties of gallium arsenide (100) polishing films was investigated by scanning tunneling microscopy / scanning tunneling spectroscopy. When the sample spacing is constant, the n-type and type-B gallium arsenide leads increase significantly with the decrease of doping concentration. The n-type gallium arsenide tunneling current / voltage characteristics of the law of change and p-type similar but there are also significant differences, especially in the forward bias doping concentration of gallium arsenide tunneling current than n Large type. The differences in tunneling line shapes can be used to qualitatively distinguish between shallowly doped p-n junction n-type and p-type semiconductor surfaces, so STM / STS is expected to be an important tool for studying p-n junction, superlattice and interface properties .