采用PECVD方法制备了a SiOxNy 薄膜 ,观察到强荧光发射现象 ,荧光光谱由波段范围为 2 60～3 5 0nm和 5 0 0～ 70 0nm的宽谱带和位置分别为 3 65、 3 75、 3 80、 73 5和 74 5nm的荧光发射峰组成。通过改变沉积过程中氢分压研究了氧含量及荧光特性的影响 ,随着氢分压下降 ,薄膜中氧含量升高 ,荧光峰强度增加 ,但位置不变 ;而荧光带在强度增加的同时 ,中心位置产生红移。根据实验结果对荧光起源及变化机制进行了讨论。 A SiOxNy thin film was prepared by PECVD, and strong fluorescence emission was observed. The fluorescence spectra were broad band from 3 nm to 3 nm, 80, 73 5 and 74 5nm fluorescence emission peak. By changing the partial pressure of hydrogen in the deposition process, the influence of oxygen content and fluorescence characteristics was studied. With the decrease of partial pressure of hydrogen, the content of oxygen in the film increased, the fluorescence peak intensity increased, but the position was unchanged. While the fluorescence intensity increased , The center position produces a red shift. Based on the experimental results, the origin and mechanism of fluorescence were discussed.