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本文报导了利用B~+、Ar~+高子对2～3μm泡径的YSmLuCaGe-IG系列的磁泡材料所进行的离子注入特性的研究.买验中,观察到明显的“沟道效应”.在能量为70KeV、剂量为2×10~(15)B~+/cm~2的离子注入条件下,磁泡材料的破灭场范围ΔH_0随注入角度θ的增大而有规律地增大.当注入角度为2°时,ΔH_0减小到最小值(2.3Oe)。在Ar~+离子注入实验中,也观察到了类似的现象.实验表明,利用小的入射角(θ<3°)对于取向〈111〉生长的磁泡石榴石料材进行离子注入,不仅能明显降低离子注入能量,而且能产生足够的损伤,从而达到抑制硬泡和制备充磁壁磁泡器件的目的.
In this paper, the ion implantation characteristics of the YSmLuCaGe-IG series of 2 ~ 3μm bubbles were studied by using B ~ +, Ar ~ + high sublayers. In the test, the obvious “channel effect” At ion implantation conditions of 70 KeV and a dose of 2 × 10 ~ (15) B ~ + / cm ~ 2, the range of the quenching field △ H_0 of bubble material increases regularly with the increase of the implantation angle θ. When the injection angle is 2 °, ΔH_0 decreases to the minimum (2.3 Oe). A similar phenomenon was also observed in the Ar ~ + ion implantation experiment, which showed that ion implantation of the bubble-grown garnet material with orientation <111> with a small angle of incidence (θ <3 °) not only significantly decreased Ion implantation of energy, but also produce enough damage, so as to inhibit the foam and the preparation of magnetizing magnetic bubble device purposes.