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采用低温生长GaAs晶体作为被动饱和吸收体兼输出镜,实现了Nd∶Gd0.42Y0.58VO4混晶激光器的调Q锁模运转。研究了Nd∶Gd0.42Y0.58VO4激光器的基频运转特性。在输出镜透射率T=10%、腔长L=40 mm的情况下,当抽运功率为8.6 W时,获得激光输出功率3.78 W,光光转换效率为43.9%。并测量了Nd∶Gd0.42Y0.58VO4混晶被动调Q激光器的输出特性。实验结果表明激光器调Q运转阈值为2 W,当抽运功率为3.7 W时,激光器出现调Q锁模行为;当抽运功率为8.6 W时,激光器调Q锁模深度达70%以上,对应的脉冲包络重复频率为670 kHz,半峰全宽为180 ns,平均输出功率为1.35 W,光光转换效率为15.7%。
The low-temperature grown GaAs crystal is used as the passive saturable absorber and output mirror, and the Q-switched operation of the Nd: Gd0.42Y0.58VO4 mixed crystal laser is achieved. The fundamental frequency characteristics of Nd: Gd0.42Y0.58VO4 laser are studied. Under the condition of output mirror transmittance of T = 10% and cavity length of L = 40 mm, the laser output power is 3.78 W and the light-to-light conversion efficiency is 43.9% when the pumping power is 8.6 W. The output characteristics of Nd:Gd0.42Y0.58VO4 mixed-crystal passively Q-switched laser were measured. The experimental results show that the laser Q-switched operation threshold is 2 W, and the Q-switched mode-locking occurs when the pumping power is 3.7 W. When the pump power is 8.6 W, the Q- The pulse envelope has a repetition frequency of 670 kHz, a full width at half maximum of 180 ns, an average output power of 1.35 W and an optical conversion efficiency of 15.7%.