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为了解并优化在电子回旋共振等离子体辅助化学汽相沉积ＧａＮ晶膜的工艺研究中的等离子体特性，利用朗缪尔探针及法拉第筒系统地测量了离子密度（Ｎｉ）、等离子体势（Ｖｐ）、电子温度（Ｔｅ）及离子流强（Ｊｉ）等多个等离子体参量随微波功率（Ｐｗ）及沉膜室气压（ｐ）变化的关系．给出了在Ｐｗ＝８５０Ｗ，ｐ＝０２２Ｐａ时，上述等离子体参量的轴向及径向分布．ＧａＮ晶膜的生长速率、电学及晶体学性能与生长条件密切相关．提高生长时的离子密度能提高ＧａＮ晶膜的氮镓比和本底电子浓度．在优化的等离子体环境下，ＧａＮ晶膜的生长速率达到０９μｍ／ｈ，其双晶Ｘ射线衍射回摆曲线的半高宽度为１６′
In order to understand and optimize the plasma properties in the process of electron cyclotron resonance plasma-assisted chemical vapor deposition of GaN crystal film, the ion density (Ni), plasma potential Vp, Te, and Ji with the microwave power (Pw) and the pressure of the membrane chamber (p). The axial and radial distribution of the above plasma parameters are given at Pw = 850W and p = 022Pa. The growth rate, electrical and crystallographic properties of GaN film are closely related to the growth conditions. Increasing the ion density during growth can increase the gallium nitride ratio and the background electron concentration of the GaN crystal film. In the optimized plasma environment, the growth rate of GaN crystal film reaches 09μm / h, and the half width of the birefringence curve of double crystal X-ray diffraction is 16 ’