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在GaAs衬底上集成增强/耗尽型数字驱动器和数控衰减器,实现了数字电路与微波电路的一体化集成。数字部分采用直接耦合场效应逻辑结构实现,具有结构简单、速度快和功耗低等优点。2～12 GHz 6 bit数控衰减器,内置6位并行驱动电路,控制端减少为6个,晶体管—晶体管逻辑电路(TTL)电平控制,并行输入控制信号。电路测试结果为:插入损耗≤4.5 dB,开关时间≤15 ns,输入输出驻波比≤1.4∶1,均方根衰减误差(全态)≤0.7 dB,静态功耗为2.0 mA@-5 V,芯片尺寸为2.6 mm×1.6 mm×0.1 mm。在GaAs PHEMT衬底上实现了数字驱动和数控衰减等功能的集成,控制电平兼容应用系统电平,应用更简单,可靠性更高。
Integration of enhancement / depletion digital drivers and digital attenuators on GaAs substrates enables the integration of digital and microwave circuits. The digital part is realized by the direct coupling field effect logic structure, which has the advantages of simple structure, high speed and low power consumption. 2 ~ 12 GHz 6-bit digital attenuator with 6-bit parallel driving circuit, 6 control terminals, TTL level control and parallel input of control signals. The circuit test results are: insertion loss ≤ 4.5 dB, switching time ≤ 15 ns, input-output VSWR ≤ 1.4: 1, root mean square attenuation error ≤ 0.7 dB, and static power consumption of 2.0 mA @ -5 V , The chip size is 2.6 mm × 1.6 mm × 0.1 mm. In the GaAs PHEMT substrate to achieve digital drive and CNC attenuation and other functions of the integrated control level compatible with the application system level, the application is simpler and more reliable.