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为了分析单粒子事件对卫星光通信系统造成的影响,需要预估器件的单粒子翻转率。通过比较微分能谱方法和FOM方法,选取FOM方法估算了在不同高度和不同倾角下的单粒子翻转率。分析了质子单粒子翻转率与空间轨道的关系。提出了基于单粒子翻转率的器件可靠性指标。数值计算结果表明,在较低轨道高度和较小轨道倾角条件下,SRAM/MOS器件受单粒子翻转影响较小、可靠性较高。
In order to analyze the impact of single event on the satellite optical communication system, we need to estimate the single event flip rate of the device. By comparing the differential energy spectrum method and the FOM method, the FOM method was used to estimate the single-particle inversion rate at different heights and different dip angles. The relationship between the proton single event inversion and the space orbit was analyzed. A device reliability index based on single-particle turnover rate is proposed. The numerical results show that the SRAM / MOS device is less affected by the single-event flip-flop with higher reliability and with lower orbit height and smaller orbit inclination.