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采用变激发功率密度下的光致发光，变温下的光致发光等手段，研究了混晶ＧａＡｓ１－ｘＰｘ：Ｎ（ｘ＝０．４）样品中各发光带的发光特性，比较了不同激发条件下Ｎｒ与Ｎｘ发光带的不同行为，求得在不同的温度区间内，Ｎг及Ｎｘ不同的激活能，结果表明Ｎг与Ｎｘ分属不同的杂质发光中心，有着不同的束缚激子的机制．
The luminescent properties of GaAs1-xPx: N (x = 0.4) samples were studied by means of photoluminescence at variable excitation power density and photoluminescence at varying temperatures. The effects of different excitation conditions Under the different behavior of Nr and Nx emission bands, different activation energies of N and Nx are obtained in different temperature ranges. The results show that N and Nx belong to different impurity luminescence centers and have different mechanisms of bound excitons.