论文部分内容阅读
使用三氟甲烷和苯的混合气体 ,利用微波电子回旋共振等离子体增强化学气相沉积法制备了F/C比在0 11— 0 6 2之间的α C∶F薄膜 .研究了微波功率对薄膜沉积和结构的影响 ,发现微波功率的升高提高了薄膜的沉积速率 ,降低了薄膜的F/C比 ,也降低了薄膜中CF和CF3 基团的密度 ,而使CF2 基团的密度保持不变 .在高微波功率下可以获得主要由CF2 基团和CC结构组成的α C∶F薄膜 .薄膜的介电频率关系 (1× 10 3 — 1× 10 6Hz)和损耗频率关系 (1× 10 2 — 1× 10 5Hz)均呈指数规律减小 ,是缺陷中心间简单隧穿引起的跳跃导电所致 .α C∶F薄膜的介电极化主要来源于电子极化
The α C:F thin films with F / C ratio of 0 11- 0 6 2 were prepared by microwave electron cyclotron resonance plasma enhanced chemical vapor deposition (CVD) using a mixed gas of trifluoromethane and benzene. Deposition and structure, it was found that an increase in microwave power increases the deposition rate of the film, decreases the F / C ratio of the film and also decreases the density of the CF and CF3 groups in the film, leaving the density of the CF2 groups unchanged The α C:F film mainly composed of CF2 groups and CC structures can be obtained under high microwave power.The relationship between the dielectric frequency of the film (1 × 10 3 - 1 × 10 6 Hz) and the loss frequency (1 × 10 2 - 1 × 10 5 Hz) decrease exponentially, which is due to the jump conduction caused by the simple tunneling of the defect centers.The dielectric polarization of α C:F thin films mainly comes from electron polarization