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基于开关器件的基本工作原理和设计方法,设计了一款Ga N大功率Ku波段单刀双掷(SPDT)开关,并着重讨论了Ga N大功率开关的耐功率能力。经制作得到不同栅指数、不同单指栅宽的Ga N开关器件,测试了其基本性能,并比较了开关器件在Ga N工艺与Ga As工艺下的性能差别。Ku波段SPDT开关实测S参数表明,插入损耗小于0.9 d B,隔离度大于27 d B,同时能够承受10 W的连续波输入功率;适当牺牲耐功率能力可提升小信号的性能。这款开关可搭配Ga N功率放大器与低噪声放大器用于收发组件前端。其尺寸仅有2.0 mm×1.4 mm,满足系统小型化的需求。
Based on the basic working principle and design method of switching device, a Ga N high power Ku band single pole double throw (SPDT) switch is designed and the power capability of Ga N high power switch is emphasized. The Ga N switching devices with different gate fingers and different gate widths were fabricated and their performance was tested. The performance of switch devices under Ga N process and Ga As process was compared. The measured S-parameters of the Ku-band SPDT switch show that the insertion loss is less than 0.9 d B, the isolation is greater than 27 d B, and the continuous wave input power of 10 W can be tolerated at the same time. This switch can be used with a Ga N power amplifier and a low-noise amplifier for the transceiver front-end. Its size is only 2.0 mm × 1.4 mm, to meet the needs of the system miniaturization.