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用紫外脉冲激光淀积方法在 Pt/ Ti O2 / Si O2 / Si( 0 0 1)衬底上制备了 L a1-x Srx Co O3/Pb( Ta0 .0 5Zr0 .4 8Ti0 .4 7) O3( PTZT) / L a1-x Srx Co O3异质结构薄膜。发现底电极 L a0 .2 5Sr0 .75Co O3可以诱导 PTZT薄膜沿 ( 0 0 1)方向取向生长。在 50 0 k Hz和 5V的工作电压下铁电电容器 L a0 .2 5Sr0 .75Co O3/PTZT/ L a0 .2 5Sr0 .75Co O3经过 5× 10 10次反转之后 ,仍保持其初始电极化的 96%。此异质结构横截面的扫描电镜照片表明界面上没有明显的因化学反应导致的第二相存在。
L a1-x Srx Co O3 / Pb (Ta0.0 5Zr0.48Ti0.47) O3 (Ta0.5Zr0.48Ti0.47) O3 was deposited on a Pt / Ti O2 / Si O2 / Si (001) substrate by UV pulse laser deposition PTZT) / L a1-x Srx Co O3 heterostructure film. It was found that the bottom electrode L a0 .2 5Sr0 .75Co O3 can induce the PTZT thin films to grow in the (0 0 1) direction. The ferroelectric capacitor L a0 .2 5Sr0 .75Co O3 / PTZT / L a0 .2 5Sr0 .75Co O3 maintains its initial electrodeized state after 5 × 10 10 reversals at a working voltage of 50 k Hz and 5 V 96%. Scanning electron micrographs of the cross-section of this heterostructure indicate that there is no apparent second phase due to the chemical reaction at the interface.