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利用脉冲激光淀积法在Pt Ti SiO2 Si衬底上制备了 2 8mol%La掺杂钛酸铅薄膜 .采用不同的淀积氧气压 ,并分析了其对薄膜微观结构和介电性能的影响 .结果表明 ,在 2Pa左右的气压下淀积的薄膜具有好的结晶度和介电系数 .在频率为 10kHz时 2 8mol%La掺杂钛酸铅薄膜的介电系数达 85 2 ,并且保持了较低的损耗 .同时制备了其他La掺杂浓度的PbTiO3薄膜 ,发现它们也有类似的特点 .对此作了定性解释
The pulsed laser deposition method was used to prepare 28 mol% La-doped lead titanate films on Pt Ti SiO 2 Si substrates. The different deposition oxygen pressures were used to analyze the effects of the deposition on the microstructure and dielectric properties of the films. The results show that the films deposited at 2 Pa have good crystallinity and dielectric constant.The dielectric constant of 28 mol% La-doped lead titanate films is 85 2 at 10 kHz, Low loss.At the same time, other La-doped PbTiO3 films were also prepared and found to have similar characteristics.