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采用分子束外延技术生长GaAs/AlAs三量子阱,并在中间的GaAs阱中δ-掺杂浅受主杂质Be原子,制作出量子限制受主远红外Teraherz原型电致发光器件.实验上测量得到4.5K时器件的电致发光谱(EL)和电传输特性(I-V曲线).在EL发射谱中清楚地观察到222cm-1处宽的尖峰,这来源于Be受主奇宇称激发态到其基态的辐射跃迁,而非辐射弛豫过程则使发射谱的信号很弱.另外在I-V曲线中0.72和1.86V的位置出现两个共振隧道贯穿现象,分别对应于中间δ-掺杂量子阱受主能级1s3/2(Γ6+Γ7)到左边非掺GaAs量子阱中HH带,及右边非掺杂GaAs量子阱中HH重空穴带到中间掺杂GaAs量子阱中Be受主杂质原子奇宇称激发态2p5/2(Γ6+Γ7)能级的共振隧穿.
The GaAs / AlAs triple quantum wells were grown by molecular beam epitaxy and the Be-doped shallow acceptor Be atoms were delta-doped in the middle GaAs well to fabricate the quantum confined acceptor far-infrared Teraherz prototype electroluminescent device. The experimentally measured The electroluminescence (EL) and electrical transport properties (IV curves) of the device at 4.5K are shown in Fig. 1. The broad spike at 222 cm-1 is clearly observed in the EL emission spectrum due to the Be acceptor odd-parity excited state And its ground state radiation transition, while the non-radiation relaxation process makes the emission spectrum of the signal is very weak.In addition IV curve at 0.72 and 1.86V position two resonant tunneling phenomenon, corresponding to the middle of δ-doped quantum well Acceptor level 1s3 / 2 (Γ6 + Γ7) to the left HH band in the undoped GaAs quantum well and HH heavy holes in the undoped GaAs quantum well to the middle doped GaAs quantum well Be acceptor atoms Odd parity resonant tunneling of the excited state 2p5 / 2 (Γ6 + Γ7).