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用液相外延的方法在 Cd Zn Te衬底上生长 Hg1 - x Cdx Te材料 ,获得了表面形貌好 ,位错密度低 ,组份均匀的碲镉汞外延材料 ,生长工艺对材料的参数控制有较好的重复性 .外延材料经热处理后 ,材料的 P型和 N型电学参数都达到较好的水平 ,并具有良好的可重复性
Hg1 - x Cdx Te materials were grown on Cd Zn Te substrates by liquid phase epitaxy. The Hg1 - x Cdx Te materials with good surface topography, low dislocation density and uniform composition were obtained. The parameters of the materials were controlled by the growth process Have good repeatability.The epitaxial material after heat treatment, the material of the P-type and N-type electrical parameters have reached a good level, and has good repeatability