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研究了1.3μm超辐射发光二极管(SLD)在γ辐照、质子辐照条件下性能参数的退化情况,并利用Srim软件计算了器件的非电离能损,引入位移损伤剂量的概念,给出了器件功率衰减与位移损伤剂量的函数关系,对SLD器件在质子辐射条件下的功率衰退做出定量预测。
The degradation of performance parameters of 1.3μm superluminescent diode (SLD) irradiated by γ-irradiation and proton irradiation was studied. The non-ionizing energy loss of the device was calculated by Srim software, and the concept of displacement damage dose was introduced. The power attenuation of the device as a function of the dose of the displacement damage quantitatively predicts the power degradation of the SLD device under proton radiation conditions.