Boron-doped hydrogenated microcrystalline Germanium (μc-Ge:H)fi lms were deposited by hot-wire CVD. H2 diluted GeH4 and B2H6 were used as precursors and the substrate temperature was kept at 300?. The properties of the samples were analyzed by XRD, Raman spectroscopy, Fourier transform infrared spectrometer and Hall Effect measurement with Van der Pauw method. It is found that thefi lms are partially crystallized, with crystalline fractions larger than 45% and grain sizes smaller than 50 nm. The B-doping can enhance the crystallization but reduce the grain sizes, and also enhance the preferential growth of Ge (220). The conductivity of thefi lms increases and tends to be saturated with increasingdiborane-to-germane ratio . All the Hall mobilities of the samples are larger than 3.8 cm2·V-1·s-1. A high conductivity of 41.3Ω-1?cm-1 is gained at=6.7%.