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本文利用光致发光测量了不同厚度GaAs覆盖层对自组织生长InAs量子点退火效应的影响．退火使量子点发光峰蓝移，发光强度减弱．深埋的量子点承受更大的应变，应变使退火引起的互扩散加强．GaAs盖层越厚，量干点的互扩散越明显，发光峰蓝移越显著，并由此导致了发光峰半高宽的不同变化．
In this paper, the effect of GaAs cap layers with different thicknesses on the annealing effect of self-organized InAs quantum dots has been measured by photoluminescence. Annealing the QD blue-shifted quantum dots, emission intensity weakened. Deep buried quantum dots are subject to greater strain and strain to enhance the interdiffusion caused by annealing. The thicker the GaAs cap layer is, the more obvious the interdiffusion of the dry spots is and the more the blue-shift of the luminescence peak is more pronounced. As a result, the half-height width of the luminescence peak varies.