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垂直双扩散金属氧化物场效应晶体管(Vertical Double-diffused Metal-OxideSemiconductor Field Effect Transistor,VDMOS)终端设计中,场限环结构被广泛应用,但随着器件耐压的增加,场限环终端在效率、占用面积方面的劣势也越发明显。结合横向变掺杂的原理,在成熟的场限环工艺基础上,只更改深阱杂质注入窗口大小与距离,设计了一种800V VDMOS终端结构,击穿电压仿真值达到938.5V,为平行平面结击穿电压的93.29%,有效终端长度仅为137.4μm。
In the vertical double-diffused metal-oxide semiconductor field effect transistor (VDMOS) terminal design, the field limiting ring structure is widely used, but with the device withstand voltage increases, the field limiting ring terminal in the efficiency , The area occupied by the more obvious disadvantages. Combined with the principle of lateral variable doping, based on the established field-limiting ring process, an 800V VDMOS terminal structure is designed by changing only the size and distance of the deep-hole impurity injection window. The breakdown voltage simulation value reaches 938.5V and is a parallel plane The junction breakdown voltage of 93.29%, the effective terminal length of only 137.4μm.