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采用由阴极真空弧等离子体源、负脉冲高压靶台和磁过滤系统组成的金属等离子体浸没注入系统 ,实现Ta+ 和Ti+ 浸没注入 ,并对离子注入层予以表征 .结果表明 ,等离子体浸没离子注入钽和钛的RBS分析射程 ,低于按设定加速电压的注入能量计算的TRIM射程 .
A plasma immersion system consisting of a cathode vacuum arc plasma source, a negative pulse high-pressure target station and a magnetic filtration system was used to immerse the Ta + and Ti + ions and characterize the ion-implanted layer. The results show that plasma immersion ion implantation The RBS analysis range for tantalum and titanium is below the TRIM range calculated for the injected energy at the set accelerating voltage.