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针对全CM O S结构制作恒压源方法中存在的功耗过大问题,提出了一种利用CM O S亚阈值特性的恒压源制作方案。该电路基于NM O S和PM O S处于饱和区工作时,两者的栅源电压随温度变化权重不同的原理,将其作相关运算,得到温度系数极低的恒压输出。基于M O S管亚阈值特性产生的电路模块中的偏置电流很小,导致功耗仅50μW。采用中芯国际0.18μm数模混合工艺制造了该电压源结构,测试结果显示,在21~110℃的温度范围内,电路的温度系数达到了2.5×1-0 5/℃。当电源电压达到1.4 V以上时,电路就可以正常工作,且其电源电压抑止比为-57 dB。
Aiming at the problem of excessive power consumption in the method of making constant voltage source in all CM O S structure, a scheme of making constant voltage source using CM O S subthreshold characteristics is proposed. The circuit is based on the principle that the gate-source voltages of the two are different from each other when the NM O S and the PM O S are in the saturation region, and the output voltage is obtained through the correlation operation. The bias current in the circuit block generated based on the subthreshold characteristics of MOSFETs is small, resulting in power consumption of only 50μW. The voltage source structure was manufactured by SMIC 0.18μm digital-to-analog hybrid technology. The test results show that the temperature coefficient of the circuit reaches 2.5 × 1-0 5 / ℃ within the temperature range of 21 ~ 110 ℃. When the supply voltage reaches 1.4 V or more, the circuit can work normally and its supply voltage rejection ratio is -57 dB.