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在建立的理论模型基础之上 ,定量地分析了EL2能级对GaAsMESFET夹断电压的影响 ,指出位于本征费米能级以下的EL2能级是影响GaAsMESFET夹断电压大小的主要因素 ,EL2能级对GaAsMESFET夹断电压的影响程度与EL2能级的缺陷密度呈线性关系。
Based on the established theoretical model, the effect of EL2 level on the pinch-off voltage of GaAsMESFET is analyzed quantitatively. It is pointed out that EL2 level below the intrinsic Fermi level is the main factor affecting the pinch-off voltage of GaAsMESFET. EL2 The effect of the level on the pinch-off voltage of the GaAsMESFET has a linear relationship with the defect density of the EL2 level.