针对ｌｎＧａＡｓＰ材料，我们比较了不同应变与阱宽组合的固定波长应变量子阱特性压应变下量子阱的应变量越大，阱宽越窄，其能带结构越理想张应变下主要由于电子与轻空穴的偶极矩阵元比电子与重空穴的大，以及其较大的态密度，使得张应变量子阱的微分增益比压应变和匹配量子阱的大得多如果固定的张应变量只能使第一子带为ＬＨ，第二子带为ＨＨ，则存在一个最优的阱宽，阱宽太小不能消除ＬＨＩ与ＨＨ２的耦合，阱宽太大又会带来ＬＨ３与ＨＨ２的耦合，同样会有不利影响 For lnGaAsP materials, we compare the fixed wavelength strain with different strain and well width. Quantum well characteristics The larger the strain of quantum well under compressive strain and the narrower the well width, the more ideal the band structure. Compared with the light-hole dipole matrix element, the larger electron and heavy holes, as well as its larger density of states, make the differential gain of the tensile strain quantum well much larger than the compressive strain and match the quantum well. If a fixed sheet The dependent variable can only make the first subband LH and the second subband HH, then there is an optimal well width. If the well width is too small, the coupling between LHI and HH2 can not be eliminated. If the well width is too large, LH3 and HH2 coupling, the same will have an adverse effect 