【摘 要】
：
In order to improve the reliability of C-RAM devices, a seamless sub-micro W heating electrode in diameter 260 nm is fabricated with standard 0.18 μm CMOS proc
【机 构】
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Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese
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In order to improve the reliability of C-RAM devices, a seamless sub-micro W heating electrode in diameter 260 nm is fabricated with standard 0.18 μm CMOS processing line. Then we successfully manufacture a chalcogenide random access memory device using this seamless sub-micro W heating electrode. The results show good electrical performance, e.g. the reset current of 1.3mA and the set/reset cycle up to 109 have been achieved.
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