P-n-P 型双极硅磁敏晶体管是在长基区晶体管的磁敏感效应基础上设计的,具有平面结构的新型磁敏器件.它的放大系数β总是小于1,但它的集电极电流的相对磁灵敏度为5~15%/KG.同时它的集电极电流的温度特性与一般锗、硅晶体管相反,具有负的温度系数,其大小为－0.1 －0．5%/℃。 PnP-type bipolar silicon magneto-sensitive transistor is a new type of magneto-sensitive device with a planar structure designed on the basis of the magnetosensitive effect of a long base transistor whose amplification coefficient β is always less than 1, but its collector current is relatively Magnetic sensitivity of 5 to 15% / KG. At the same time its collector current temperature characteristics and general germanium, silicon transistors on the contrary, with a negative temperature coefficient, the size of -0.1 -0.5% / ℃.