Two-inch Ga2O3 films with (201)-orientation are grown on c-sapphire at 850-1050℃ by hydride vapor phase epitaxy.High-resolution x-ray diffraction shows that pure β-Ga2O3 with a smooth surface has a higher crystal quality,and the Raman spectra reveal a very small residual strain in/β-Ga2O3 grown by hydride vapor phase epitaxy compared with bulk single crystal.The optical transmittance is higher than 80％ in the visible and near-UV regions,and the optical bandgap energy is calculated to be 4.9eV.