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美国贝尔实验室研制的1024单元P 沟道MOS随机存储器(MOS RAM)(Electronics.Dec.18,1972,p.29)采用电子束工艺重新生产后,使整个存储线路,包括地址、译码、读出放大器在内,可以放在一块47×71密耳~2的芯片上。这个数据较目前的MOS RAM 的面积小四倍。这个单管单元RAM 的对准精度为1微米,也是MOS RAM 的一个新记录。取数时间为45毫微秒(未改进以前,芯片取数时间为150ns,译者注),单元尺寸是栅长为4微米,接触孔为2微米见方。象以前的芯片一样,新的芯片也采
The 1024-cell P-channel MOS RAM (Electronics RAM) developed by Bell Labs (Electronics.Dec.18,1972, p.29) has been remanufactured using the electron beam process to enable the entire memory circuitry including address, decode, The sense amplifier can be placed on a 47 × 71 mil ~ 2 chip. This data is four times smaller than the current MOS RAM area. The alignment accuracy of this single-tube cell RAM is 1 micrometer, which is also a new record for MOS RAM. The fetch time was 45 nanoseconds (before chip fetch time was 150ns, the translator’s note). The cell size was 4 micrometers for the gate length and 2 micrometers for the contact hole. Like the previous chip, the new chip is also adopted