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引言 Ⅱ—Ⅵ族化合物半导体是良好的发光材料。具有禁带宽度大,发光效率高等优点。但它们的熔点高,蒸汽压高,只有在高温高压下才能熔融。一般条件下难以实现熔体生长。 我们以前用汽相化学输运法进行了ZnSe,ZnS及其固熔体的晶体生长。此法的优点是能在较低温度下(对该物质熔点而言)生长晶体;可以获得低温晶形;晶体完整性较好;生长设备简单。缺点是生长周期长。
Introduction Ⅱ-Ⅵ compound semiconductor is a good luminescent material. With a forbidden band width, high luminous efficiency advantages. However, they have a high melting point and a high vapor pressure, and can be melted only under high temperature and high pressure. Under normal conditions difficult to achieve melt growth. We have previously carried out the crystal growth of ZnSe, ZnS and their solid melts by vapor phase chemical transport. The advantage of this method is the ability to grow crystals at lower temperatures (for the melting point of the material), to obtain lower temperature crystalline forms, better crystal integrity, and simple growth equipment. The disadvantage is the long growth cycle.