论文部分内容阅读
综述了纳电子学和神经形态芯片进入新世纪后所处发展阶段以及近两年的最新进展。在纳电子领域,综述并分析了当今集成电路的发展现状,包括鳍式场效应晶体管(FinFET)的发展、10nm节点的技术突破、7nm和5nm节点的前瞻性技术研究以及三类后互补金属氧化物半导体(CMOS)器件(自旋电子器件、隧穿FET和碳纳米管栅的二维半导体MoS_2晶体管)的探索性研究,指出摩尔定律将沿着加强栅对沟道电子的控制(三栅和环栅)、更换高迁移率材料和采用新机理等技术路线继续前行。在神经形态芯片领域,综述并分析了神经形态芯片的发展历程、“真北”类脑芯片的技术创新和应用、当今嵌入式神经处理器的四个发展特点和采用新器件提高能量效率的探索。采用纳电子技术的神经形态芯片的发展将成为未来智能时代发展的基础。
The development stage of nanoelectronics and neuromorphic chips after entering the new century and the latest progress in the past two years are summarized. In the field of nanoelectronics, the development of today’s integrated circuits is reviewed and analyzed. These include the development of FinFETs, breakthroughs in 10nm nodes, prospective technologies in 7nm and 5nm nodes, and three types of post-Complementary Metal Oxidation Exploratory research on semiconductor devices (spintronic devices, tunneling FETs, and two-dimensional semiconductor MoS 2 transistors with carbon nanotube gates) states that Moore’s Law will enhance the gate-to-channel control of electrons along the gate Ring gate), the replacement of high mobility materials and the use of new mechanisms and other technical routes to move on. In the field of neuromorphic chips, the development of neuromorphic chips is reviewed and analyzed. The technological innovation and application of “true North” type of brain chip, the four developmental characteristics of today’s embedded neuronal processors and the exploration of using new devices to improve energy efficiency . The development of neuromorphic chips using nanoelectronic technology will be the basis for the future development of an intelligent era.