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设计研制了一种基于量子隧道效应机制的场发射压力传感器原型器件,用CVD技术制备了粒径为3～9 nm,厚度为30～40 nm的纳米硅薄膜,并同时把这种低维材料引入到传感器阴极发射尖锥的制作,形成纳米硅薄膜为实体的发射体结构.用HREM及TED分析了纳米硅态的显微特性,用场发射扫描电子显微镜SEM分析了发射体及阵列的微观结构,用HP4145B晶体管参数测试仪考察了传感器件的场发射特性.实验结果表明,当外加电场为5.6×103V/m时,器件有效区域发射电流密度可达53.5A/m2.
A prototype device of field emission pressure sensor based on quantum tunneling mechanism was designed and developed. A nano-silicon film with particle size of 3 ~ 9 nm and thickness of 30 ~ 40 nm was prepared by CVD technique. At the same time, The fabrication of nano-silicon thin film as a solid emitter was introduced into the fabrication of the cathode emission tip of the sensor.The microstructures of the nanostructured silicon were analyzed by HREM and TED, and the microstructure of the emitter and the array was analyzed by field emission scanning electron microscopy , The field emission characteristics of the sensor were investigated by using HP4145B transistor parameter tester.The experimental results show that the emission current density of the active region can reach 53.5A / m2 when the applied electric field is 5.6 × 103V / m.