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真空喷涂制备了PFBT包埋Ti O2纳米粒子(NPs)高分子复合薄膜,利用Ga In/PFBT+Ti O2NPs/ITO器件结构对薄膜进行了伏安特性测试,研究分子与NPs质量比对其电学输运特性的影响。结果表明:器件均具有双极阻变开关特性,质量比对其电学特性影响不明显。分析发现薄膜高低阻态输运均为欧姆特性,阻变机理为电荷的捕获和释放,结合第一性原理计算验证,表明引入NPs后薄膜陷阱变浅导致其开关比较小。
The PFBT embedded Ti O2 nanoparticles (NPs) polymer composite films were prepared by vacuum spray coating. The voltammetric properties of the films were tested by Ga In / PFBT + Ti O2 NPPs / ITO devices. Influence of transport characteristics. The results show that the device has bipolar resistive switching characteristics, the mass ratio of its electrical characteristics is not obvious. The analysis shows that the barrier states of the films are all ohmic, and the mechanism of resistance change is the capture and release of charges. Combined with the first-principles calculations, it is shown that the shallowing of the film traps leads to a relatively small switching.