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金属-半导体-金属(MSM)结构探测器结构简单,可避免材料因高掺杂所带来的困难,简化了加工、制备的过程。MSM型紫外探测器优点多:高增益、暗电流低、响应速率快、大带宽以及高灵敏度。但MSM型探测器工作在偏压状态下,工作偏压决定了探测器耗尽区的范围,因此,探测器的特性参数与工作偏压有关。本文主要从理论分析研究硅基MSM光电探测器结构原理及工艺特点。
The structure of the metal-semiconductor-metal (MSM) structure detector is simple, which avoids the difficulty caused by the high doping of the material and simplifies the processing and preparation process. MSM-type UV detector and more advantages: high gain, dark current, fast response, large bandwidth and high sensitivity. However, the MSM detector operates in a biased state, and the operating bias determines the range of the detector depletion region. Therefore, the characteristic parameters of the detector are related to the operating bias voltage. In this paper, the theoretical analysis of the silicon-based MSM photodetector structure principle and process characteristics.